 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor product specification silicon npn power transistors BU941P description ? ? with to-3pn package ? darlington ? high breakdown voltage applications ? high ruggedness electronic ignitions. ? high voltage ignition coil driver pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i cm collector current -peak 30 a i b base current 1 a i bm base current-peak 5 a p tot total power dissipation t c =25 ?? 155 w t j max.operating junction temperature 175 ?? t stg storage temperature -65~175 ?? thermal characteristics symbol parameter max unit r th j-case thermal resistance junction case 0.97 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU941P charact eristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1 a ;i b =0;l=10mh 400 v v cesat-1 collector-emitter saturation voltage i c =8a; i b =0.1 a 1.6 v v cesat-2 collector-emitter saturation voltage i c =10a; i b =0.25 a 1.8 v v cesat-3 collector-emitter saturation voltage i c =12a; i b =0.3 a 2.0 v v besat-1 base-emitter saturation voltage i c =8a; i b =0.1 a 2.2 v v besat-2 base-emitter saturation voltage i c =10a; i b =0.25 a 2.5 v v besat-3 base-emitter saturation voltage i c =12a; i b =0.3 a 2.7 v i ces collector cut-off current v ce =500v ; v be =0; t j =125 ?? 0.1 0.5 ma i ceo collector cut-off current v ce =450v ; i b =0; t j =125 ?? 0.1 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 20 ma h fe dc current gain i c =5a ; v ce =10v 300 v f diode forward voltage i f =10a 2.5 v inchange semiconductor product specification 3 silicon npn power transistors BU941P package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
Price & Availability of BU941P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |